Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM60NB190CI C0G
RFQ
VIEW
RFQ
794
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 18A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 33.8W (Tc) N-Channel 600V 18A (Tc) 190 mOhm @ 6A, 10V 4V @ 250µA 31nC @ 10V 1273pF @ 100V 10V ±30V
TSM60NB260CI C0G
RFQ
VIEW
RFQ
3,887
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 13A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 32.1W (Tc) N-Channel 600V 13A (Tc) 260 mOhm @ 3.9A, 10V 4V @ 250µA 30nC @ 10V 1273pF @ 100V 10V ±30V
TSM60NB190CZ C0G
RFQ
VIEW
RFQ
2,659
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 18A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 33.8W (Tc) N-Channel 600V 18A (Tc) 190 mOhm @ 6A, 10V 4V @ 250µA 31nC @ 10V 1273pF @ 100V 10V ±30V
TSM60NB190CM2 RNG
RFQ
VIEW
RFQ
3,787
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 18A TO263 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 150.6W (Tc) N-Channel 600V 18A (Tc) 190 mOhm @ 6A, 10V 4V @ 250µA 31nC @ 10V 1273pF @ 100V 10V ±30V
TSM60NB190CM2 RNG
RFQ
VIEW
RFQ
3,697
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 18A TO263 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 150.6W (Tc) N-Channel 600V 18A (Tc) 190 mOhm @ 6A, 10V 4V @ 250µA 31nC @ 10V 1273pF @ 100V 10V ±30V
TSM60NB190CM2 RNG
RFQ
VIEW
RFQ
2,629
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 18A TO263 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 150.6W (Tc) N-Channel 600V 18A (Tc) 190 mOhm @ 6A, 10V 4V @ 250µA 31nC @ 10V 1273pF @ 100V 10V ±30V