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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AUIRFB8405	RFQ VIEW	PDF RFQ	3,890 In-stock	Infineon Technologies	MOSFET N-CH 40V 120A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	163W (Tc)	N-Channel	-	40V	120A (Tc)	2.5 mOhm @ 100A, 10V	3.9V @ 100µA	161nC @ 10V	5193pF @ 25V	10V	±20V
	AUIRFS8405TRL	RFQ VIEW	PDF RFQ	2,294 In-stock	Infineon Technologies	MOSFET N-CH 40V 120A D2PAK		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	163W (Tc)	N-Channel	-	40V	120A (Tc)	2.3 mOhm @ 100A, 10V	3.9V @ 100µA	161nC @ 10V	5193pF @ 25V	10V	±20V
	AUIRFSL8405	RFQ VIEW	PDF RFQ	2,290 In-stock	Infineon Technologies	MOSFET N-CH 40V 120A TO262		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	163W (Tc)	N-Channel	-	40V	120A (Tc)	2.3 mOhm @ 100A, 10V	3.9V @ 100µA	161nC @ 10V	5193pF @ 25V	10V	±20V
	AUIRFS8405	RFQ VIEW	PDF RFQ	1,486 In-stock	Infineon Technologies	MOSFET N-CH 40V 120A D2PAK		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	163W (Tc)	N-Channel	-	40V	120A (Tc)	2.3 mOhm @ 100A, 10V	3.9V @ 100µA	161nC @ 10V	5193pF @ 25V	10V	±20V

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