Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor MOSFET N-CH 600V 10.8A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 94W (Tc) N-Channel - 600V 10.8A (Tc) 299 mOhm @ 5.4A, 10V 4V @ 250µA 35.6nC @ 10V 1505pF @ 100V 10V ±30V
FCP11N60N
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1,930
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ON Semiconductor MOSFET N-CH 600V 10.8A TO220 SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 94W (Tc) N-Channel - 600V 10.8A (Tc) 299 mOhm @ 5.4A, 10V 4V @ 250µA 35.6nC @ 10V 1505pF @ 100V 10V ±30V
FCPF11N60NT
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3,508
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ON Semiconductor MOSFET N-CH 600V 10.8A TO220F SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 32.1W (Tc) N-Channel - 600V 10.8A (Tc) 299 mOhm @ 5.4A, 10V 4V @ 250µA 35.6nC @ 10V 1505pF @ 100V 10V ±30V