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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,898
In-stock
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Texas Instruments | MOSFET P-CH 20V 1.6A 4DSBGA | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | 4-DSBGA (1x1) | 1W (Ta) | P-Channel | - | 20V | 1.6A (Ta) | 47 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | 478pF @ 10V | 2.5V, 4.5V | -6V | |||
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VIEW |
1,693
In-stock
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Texas Instruments | MOSFET P-CH 20V 1.6A 4DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | 4-DSBGA (1x1) | 1W (Ta) | P-Channel | - | 20V | 1.6A (Ta) | 47 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | 478pF @ 10V | 2.5V, 4.5V | -6V | |||
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VIEW |
2,084
In-stock
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Texas Instruments | MOSFET P-CH 20V 1.6A 4DSBGA | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | 4-DSBGA (1x1) | 1W (Ta) | P-Channel | - | 20V | 1.6A (Ta) | 47 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | 478pF @ 10V | 2.5V, 4.5V | -6V | |||
