Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI3442CDV-T1-GE3
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RFQ
3,909
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Vishay Siliconix MOSFET N-CH 20V 8A 6TSOP TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.7W (Ta), 2.7W (Tc) N-Channel 20V 8A (Tc) 27 mOhm @ 6.5A, 10V 1.5V @ 250µA 14nC @ 10V 335pF @ 10V 2.5V, 10V ±12V
SI3442CDV-T1-GE3
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RFQ
1,528
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Vishay Siliconix MOSFET N-CH 20V 8A 6TSOP TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.7W (Ta), 2.7W (Tc) N-Channel 20V 8A (Tc) 27 mOhm @ 6.5A, 10V 1.5V @ 250µA 14nC @ 10V 335pF @ 10V 2.5V, 10V ±12V
SI3442CDV-T1-GE3
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RFQ
3,326
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Vishay Siliconix MOSFET N-CH 20V 8A 6TSOP TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.7W (Ta), 2.7W (Tc) N-Channel 20V 8A (Tc) 27 mOhm @ 6.5A, 10V 1.5V @ 250µA 14nC @ 10V 335pF @ 10V 2.5V, 10V ±12V
SSM6J206FE(TE85L,F
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RFQ
2,621
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2A ES6 - Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 (1.6x1.6) 500mW (Ta) P-Channel 20V 2A (Ta) 130 mOhm @ 1A, 4V 1V @ 1mA - 335pF @ 10V 1.8V, 4V ±8V
SSM6J206FE(TE85L,F
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RFQ
1,594
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2A ES6 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 (1.6x1.6) 500mW (Ta) P-Channel 20V 2A (Ta) 130 mOhm @ 1A, 4V 1V @ 1mA - 335pF @ 10V 1.8V, 4V ±8V
SSM6J206FE(TE85L,F
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RFQ
2,463
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2A ES6 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 (1.6x1.6) 500mW (Ta) P-Channel 20V 2A (Ta) 130 mOhm @ 1A, 4V 1V @ 1mA - 335pF @ 10V 1.8V, 4V ±8V
SSM3J304T(TE85L,F)
RFQ
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RFQ
2,871
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.3A TSM U-MOSIII Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel 20V 2.3A (Ta) 127 mOhm @ 1A, 4V - 6.1nC @ 4V 335pF @ 10V 1.8V, 4V ±8V
SSM3J304T(TE85L,F)
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RFQ
1,549
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.3A TSM U-MOSIII Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel 20V 2.3A (Ta) 127 mOhm @ 1A, 4V - 6.1nC @ 4V 335pF @ 10V 1.8V, 4V ±8V
SSM3J304T(TE85L,F)
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RFQ
1,596
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.3A TSM U-MOSIII Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel 20V 2.3A (Ta) 127 mOhm @ 1A, 4V - 6.1nC @ 4V 335pF @ 10V 1.8V, 4V ±8V