Package / Case :
Supplier Device Package :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHG47N60AE-GE3
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2,712
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Vishay Siliconix MOSFET N-CH 600V 43A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 313W (Tc) N-Channel - 600V 43A (Tc) 65 mOhm @ 24A, 10V 4V @ 250µA 182nC @ 10V 3600pF @ 100V 10V ±30V
SIHP38N60E-GE3
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RFQ
2,940
In-stock
Vishay Siliconix MOSFET N-CH 600V 43A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 313W (Tc) N-Channel - 600V 43A (Tc) 65 mOhm @ 19A, 10V 4V @ 250µA 183nC @ 10V 3600pF @ 100V 10V ±30V