Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP613P
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RFQ
1,867
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Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSO613SPV
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RFQ
3,887
In-stock
Infineon Technologies MOSFET P-CH 60V 3.44A 8DSO SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) PG-DSO-8 2.5W (Ta) P-Channel - 60V 3.44A (Ta) 130 mOhm @ 3.44A, 10V 4V @ 1mA 30nC @ 10V 875pF @ 25V 10V ±20V
BSP613PL6327HUSA1
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RFQ
2,102
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PL6327HUSA1
RFQ
VIEW
RFQ
3,028
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PL6327HUSA1
RFQ
VIEW
RFQ
648
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PH6327XTSA1
RFQ
VIEW
RFQ
2,316
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PH6327XTSA1
RFQ
VIEW
RFQ
2,962
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PH6327XTSA1
RFQ
VIEW
RFQ
3,505
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSO613SPVGHUMA1
RFQ
VIEW
RFQ
2,647
In-stock
Infineon Technologies MOSFET P-CH 60V 3.44A 8DSO SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) PG-DSO-8 2.5W (Ta) P-Channel - 60V 3.44A (Ta) 130 mOhm @ 3.44A, 10V 4V @ 1mA 30nC @ 10V 875pF @ 25V 10V ±20V
BSO613SPVGHUMA1
RFQ
VIEW
RFQ
3,120
In-stock
Infineon Technologies MOSFET P-CH 60V 3.44A 8DSO SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) PG-DSO-8 2.5W (Ta) P-Channel - 60V 3.44A (Ta) 130 mOhm @ 3.44A, 10V 4V @ 1mA 30nC @ 10V 875pF @ 25V 10V ±20V
BSO613SPVGHUMA1
RFQ
VIEW
RFQ
1,194
In-stock
Infineon Technologies MOSFET P-CH 60V 3.44A 8DSO SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) PG-DSO-8 2.5W (Ta) P-Channel - 60V 3.44A (Ta) 130 mOhm @ 3.44A, 10V 4V @ 1mA 30nC @ 10V 875pF @ 25V 10V ±20V