Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SQM100N10-10_GE3
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Vishay Siliconix MOSFET N-CH 100V 100A TO-263 Automotive, AEC-Q101, TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 375W (Tc) N-Channel - 100V 100A (Tc) 10.5 mOhm @ 30A, 10V 2.5V @ 250µA 185nC @ 10V 8050pF @ 25V 4.5V, 10V ±20V
SQM100N10-10_GE3
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3,768
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Vishay Siliconix MOSFET N-CH 100V 100A TO-263 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 375W (Tc) N-Channel - 100V 100A (Tc) 10.5 mOhm @ 30A, 10V 2.5V @ 250µA 185nC @ 10V 8050pF @ 25V 4.5V, 10V ±20V
SQM100N10-10_GE3
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3,682
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Vishay Siliconix MOSFET N-CH 100V 100A TO-263 Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 375W (Tc) N-Channel - 100V 100A (Tc) 10.5 mOhm @ 30A, 10V 2.5V @ 250µA 185nC @ 10V 8050pF @ 25V 4.5V, 10V ±20V