Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI2329DS-T1-GE3
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Vishay Siliconix MOSFET P-CH 8V 6A SOT-23 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 2.5W (Tc) P-Channel - 8V 6A (Tc) 30 mOhm @ 5.3A, 4.5V 800mV @ 250µA 29nC @ 4.5V 1485pF @ 4V 1.2V, 4.5V ±5V
SI2329DS-T1-GE3
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Vishay Siliconix MOSFET P-CH 8V 6A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 2.5W (Tc) P-Channel - 8V 6A (Tc) 30 mOhm @ 5.3A, 4.5V 800mV @ 250µA 29nC @ 4.5V 1485pF @ 4V 1.2V, 4.5V ±5V
SI2329DS-T1-GE3
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3,733
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Vishay Siliconix MOSFET P-CH 8V 6A SOT-23 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.25W (Ta), 2.5W (Tc) P-Channel - 8V 6A (Tc) 30 mOhm @ 5.3A, 4.5V 800mV @ 250µA 29nC @ 4.5V 1485pF @ 4V 1.2V, 4.5V ±5V