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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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,%20SC-63.jpg)
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VIEW |
3,726
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 16.9A TO-252 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 2.1W (Ta), 41.7W (Tc) | N-Channel | - | 100V | 16.9A (Tc) | 66 mOhm @ 6.6A, 10V | 3V @ 250µA | 30nC @ 10V | 860pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
3,866
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 16.9A TO-252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 2.1W (Ta), 41.7W (Tc) | N-Channel | - | 100V | 16.9A (Tc) | 66 mOhm @ 6.6A, 10V | 3V @ 250µA | 30nC @ 10V | 860pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
1,472
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 16.9A TO-252 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 2.1W (Ta), 41.7W (Tc) | N-Channel | - | 100V | 16.9A (Tc) | 66 mOhm @ 6.6A, 10V | 3V @ 250µA | 30nC @ 10V | 860pF @ 50V | 4.5V, 10V | ±20V | |||
