Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHP12N50E-GE3
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2,120
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Vishay Siliconix MOSFET N-CH 500V 10.5A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 114W (Tc) N-Channel 500V 10.5A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 50nC @ 10V 886pF @ 100V 10V ±30V
SIHB12N50E-GE3
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RFQ
842
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Vishay Siliconix MOSFET N-CH 500V 10.5A TO-263 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 114W (Tc) N-Channel 500V 10.5A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 50nC @ 10V 886pF @ 100V 10V ±30V
SIHD12N50E-GE3
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RFQ
2,694
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Vishay Siliconix MOSFET N-CHAN 500V DPAK E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TA) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 114W (Tc) N-Channel 550V 10.5A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 50nC @ 10V 886pF @ 100V 10V ±30V
SIHA12N50E-E3
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RFQ
3,339
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Vishay Siliconix MOSFET N-CH 500V 10.5A TO-220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 32W (Tc) N-Channel 500V 10.5A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 50nC @ 10V 886pF @ 100V 10V ±30V