Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP050N06N G
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VIEW
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604
In-stock
Infineon Technologies MOSFET N-CH 60V 100A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 300W (Tc) N-Channel - 60V 100A (Tc) 5 mOhm @ 100A, 10V 4V @ 270µA 167nC @ 10V 6100pF @ 30V 10V ±20V
IPB050N06NGATMA1
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VIEW
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2,718
In-stock
Infineon Technologies MOSFET N-CH 60V 100A TO-263 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 60V 100A (Tc) 4.7 mOhm @ 100A, 10V 4V @ 270µA 167nC @ 10V 6100pF @ 30V 10V ±20V
IPB050N06NGATMA1
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VIEW
RFQ
2,190
In-stock
Infineon Technologies MOSFET N-CH 60V 100A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 60V 100A (Tc) 4.7 mOhm @ 100A, 10V 4V @ 270µA 167nC @ 10V 6100pF @ 30V 10V ±20V
IPB050N06NGATMA1
RFQ
VIEW
RFQ
1,865
In-stock
Infineon Technologies MOSFET N-CH 60V 100A TO-263 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 60V 100A (Tc) 4.7 mOhm @ 100A, 10V 4V @ 270µA 167nC @ 10V 6100pF @ 30V 10V ±20V
TPH2R306NH,L1Q
RFQ
VIEW
RFQ
3,608
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 60A SOP ADV U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 78W (Tc) N-Channel - 60V 60A (Tc) 2.3 mOhm @ 30A, 10V 4V @ 1mA 72nC @ 10V 6100pF @ 30V 6.5V, 10V ±20V
TPH2R306NH,L1Q
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VIEW
RFQ
2,501
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 60A SOP ADV U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 78W (Tc) N-Channel - 60V 60A (Tc) 2.3 mOhm @ 30A, 10V 4V @ 1mA 72nC @ 10V 6100pF @ 30V 6.5V, 10V ±20V
TPH2R306NH,L1Q
RFQ
VIEW
RFQ
2,013
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 60A SOP ADV U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 78W (Tc) N-Channel - 60V 60A (Tc) 2.3 mOhm @ 30A, 10V 4V @ 1mA 72nC @ 10V 6100pF @ 30V 6.5V, 10V ±20V