Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHF28N60EF-GE3
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1,778
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Vishay Siliconix MOSFET N-CH 600V 28A FULLPAK220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 39W (Tc) N-Channel 600V 28A (Tc) 123 mOhm @ 14A, 10V 4V @ 250µA 120nC @ 10V 2714pF @ 100V 10V ±30V
SIHB28N60EF-GE3
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1,176
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Vishay Siliconix MOSFET N-CH 600V 28A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 250W (Tc) N-Channel 600V 28A (Tc) 123 mOhm @ 14A, 10V 4V @ 250µA 120nC @ 10V 2714pF @ 100V 10V ±30V
SIHG28N60EF-GE3
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RFQ
3,684
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Vishay Siliconix MOSFET N-CH 600V 28A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 250W (Tc) N-Channel 600V 28A (Tc) 123 mOhm @ 14A, 10V 4V @ 250µA 120nC @ 10V 2714pF @ 100V 10V ±30V
SIHP28N60EF-GE3
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RFQ
1,193
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Vishay Siliconix MOSFET N-CH 600V 28A TO-220-3 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel 600V 28A (Tc) 123 mOhm @ 14A, 10V 4V @ 250µA 120nC @ 10V 2714pF @ 100V 10V ±30V