Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHB21N60EF-GE3
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1,401
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Vishay Siliconix MOSFET N-CH 600V 21A D2PAK TO263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) 227W (Tc) N-Channel 600V 21A (Tc) 176 mOhm @ 11A, 10V 4V @ 250µA 84nC @ 10V 2030pF @ 100V 10V ±30V
SIHA21N60EF-E3
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3,303
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Vishay Siliconix MOSFET N-CH 600V 21A TO-220 FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 35W (Tc) N-Channel 600V 21A (Tc) 176 mOhm @ 11A, 10V 4V @ 250µA 84nC @ 10V 2030pF @ 100V 10V ±30V
SIHG21N60EF-GE3
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3,273
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Vishay Siliconix MOSFET N-CH 600V 21A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 227W (Tc) N-Channel 600V 21A (Tc) 176 mOhm @ 11A, 10V 4V @ 250µA 84nC @ 10V 2030pF @ 100V 10V ±30V
SIHP21N60EF-GE3
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1,780
In-stock
Vishay Siliconix MOSFET N-CH 600V 21A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 227W (Tc) N-Channel 600V 21A (Tc) 176 mOhm @ 11A, 10V 4V @ 250µA 84nC @ 10V 2030pF @ 100V 10V ±30V