- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,464
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 60A POLARPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) | 5.2W (Ta), 125W (Tc) | N-Channel | - | 60V | 60A (Tc) | 7.4 mOhm @ 19.8A, 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
1,760
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 60A POLARPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) | 5.2W (Ta), 125W (Tc) | N-Channel | - | 60V | 60A (Tc) | 7.4 mOhm @ 19.8A, 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
3,531
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 60A POLARPAK | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) | 5.2W (Ta), 125W (Tc) | N-Channel | - | 60V | 60A (Tc) | 6.1 mOhm @ 20A, 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
1,086
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 60A POLARPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) | 5.2W (Ta), 125W (Tc) | N-Channel | - | 60V | 60A (Tc) | 6.1 mOhm @ 20A, 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
2,379
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 60A POLARPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) | 5.2W (Ta), 125W (Tc) | N-Channel | - | 60V | 60A (Tc) | 6.1 mOhm @ 20A, 10V | 4.4V @ 250µA | 77nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
VIEW |
601
In-stock
|
STMicroelectronics | N-CHANNEL 60 V, 0.0031 OHM TYP., | STripFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 134W (Tc) | N-Channel | - | 60V | 80A (Tc) | 3.8 mOhm @ 40A, 10V | 4V @ 250µA | 55nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
693
In-stock
|
STMicroelectronics | N-CHANNEL 60 V, 0.0031 OHM TYP., | STripFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 134W (Tc) | N-Channel | - | 60V | 80A (Tc) | 3.8 mOhm @ 40A, 10V | 4V @ 250µA | 55nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
3,100
In-stock
|
STMicroelectronics | N-CHANNEL 60 V, 0.0031 OHM TYP., | STripFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 134W (Tc) | N-Channel | - | 60V | 80A (Tc) | 3.8 mOhm @ 40A, 10V | 4V @ 250µA | 55nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
VIEW |
2,002
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 28A 8-SOP ADV | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 60V | 28A (Ta) | 5.9 mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
3,689
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 28A 8-SOP ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 60V | 28A (Ta) | 5.9 mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
3,188
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 28A 8-SOP ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 60V | 28A (Ta) | 5.9 mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | 3100pF @ 30V | 10V | ±20V | |||
