Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
3,860
In-stock
Vishay Siliconix MOSFET N-CH 600V 60A TO247AC E Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 417W (Tc) N-Channel - 600V 60A (Tc) 40 mOhm @ 36.5A, 10V 4V @ 250µA 394nC @ 10V 5500pF @ 100V 10V ±30V
STW65N65DM2AG
RFQ
VIEW
RFQ
1,987
In-stock
STMicroelectronics MOSFET N-CH 650V 60A Automotive, AEC-Q101, MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 446W (Tc) N-Channel - 650V 60A (Tc) 50 mOhm @ 30A, 10V 5V @ 250µA 120nC @ 10V 5500pF @ 100V 10V ±25V