Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFB17N50L
RFQ
VIEW
RFQ
3,825
In-stock
Vishay Siliconix MOSFET N-CH 500V 16A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 220W (Tc) N-Channel 500V 16A (Tc) 320 mOhm @ 9.9A, 10V 5V @ 250µA 130nC @ 10V 2760pF @ 25V 10V ±30V
IRFP17N50L
RFQ
VIEW
RFQ
1,784
In-stock
Vishay Siliconix MOSFET N-CH 500V 16A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 220W (Tc) N-Channel 500V 16A (Tc) 320 mOhm @ 9.9A, 10V 5V @ 250µA 130nC @ 10V 2760pF @ 25V 10V ±30V
IRFP17N50LPBF
RFQ
VIEW
RFQ
1,101
In-stock
Vishay Siliconix MOSFET N-CH 500V 16A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 220W (Tc) N-Channel 500V 16A (Tc) 320 mOhm @ 9.9A, 10V 5V @ 250µA 130nC @ 10V 2760pF @ 25V 10V ±30V
IRFB17N50LPBF
RFQ
VIEW
RFQ
1,325
In-stock
Vishay Siliconix MOSFET N-CH 500V 16A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 220W (Tc) N-Channel 500V 16A (Tc) 320 mOhm @ 9.9A, 10V 5V @ 250µA 130nC @ 10V 2760pF @ 25V 10V ±30V