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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFP4332-203PBF	RFQ VIEW	PDF RFQ	3,818 In-stock	Infineon Technologies	MOSFET N-CH 250V 57A TO247AC		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	360W (Tc)	N-Channel	-	250V	57A (Tc)	33 mOhm @ 35A, 10V	5V @ 250µA	150nC @ 10V	5860pF @ 25V	10V	±30V
	SQD50N04-4M5L_GE3	RFQ VIEW	PDF RFQ	1,640 In-stock	Vishay Siliconix	MOSFET N-CH 40V 50A TO252AA		-	Active	-	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA	136W (Tc)	N-Channel	-	40V	50A (Tc)	3.5 mOhm @ 20A, 10V	2.5V @ 250µA	130nC @ 10V	5860pF @ 25V	4.5V, 10V	±20V
	IRFB4332PBF	RFQ VIEW	PDF RFQ	2,247 In-stock	Infineon Technologies	MOSFET N-CH 250V 60A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	390W (Tc)	N-Channel	-	250V	60A (Tc)	33 mOhm @ 35A, 10V	5V @ 250µA	150nC @ 10V	5860pF @ 25V	10V	±30V
	IRFP4332PBF	RFQ VIEW	PDF RFQ	981 In-stock	Infineon Technologies	MOSFET N-CH 250V 57A TO-247AC		HEXFET®	Active	Bulk	MOSFET (Metal Oxide)	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	360W (Tc)	N-Channel	-	250V	57A (Tc)	33 mOhm @ 35A, 10V	5V @ 250µA	150nC @ 10V	5860pF @ 25V	10V	±30V

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