Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDAF59N30
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RFQ
3,714
In-stock
ON Semiconductor MOSFET N-CH 300V 34A TO-3PF UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 161W (Tc) N-Channel - 300V 34A (Tc) 56 mOhm @ 17A, 10V 5V @ 250µA 100nC @ 10V 4670pF @ 25V 10V ±30V
APT8024LLLG
RFQ
VIEW
RFQ
3,575
In-stock
Microsemi Corporation MOSFET N-CH 800V 31A TO-264 POWER MOS 7® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 565W (Tc) N-Channel - 800V 31A (Tc) 240 mOhm @ 15.5A, 10V 5V @ 2.5mA 160nC @ 10V 4670pF @ 25V 10V ±30V
APT8024JLL
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RFQ
3,879
In-stock
Microsemi Corporation MOSFET N-CH 800V 29A SOT-227 POWER MOS 7® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 460W (Tc) N-Channel - 800V 29A (Tc) 240 mOhm @ 14.5A, 10V 5V @ 2.5mA 160nC @ 10V 4670pF @ 25V 10V ±30V
APT8024B2LLG
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RFQ
2,527
In-stock
Microsemi Corporation MOSFET N-CH 800V 31A T-MAX POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 565W (Tc) N-Channel - 800V 31A (Tc) 240 mOhm @ 15.5A, 10V 5V @ 2.5mA 160nC @ 10V 4670pF @ 25V 10V ±30V
FDA59N30
RFQ
VIEW
RFQ
3,301
In-stock
ON Semiconductor MOSFET N-CH 300V 59A TO-3P UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 500W (Tc) N-Channel - 300V 59A (Tc) 56 mOhm @ 29.5A, 10V 5V @ 250µA 100nC @ 10V 4670pF @ 25V 10V ±30V