Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SQR40N10-25_GE3
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1,973
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Vishay Siliconix MOSFET N-CH 100V 40A TO263 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 136W (Tc) N-Channel - 100V 40A (Tc) 25 mOhm @ 40A, 10V 2.5V @ 250µA 70nC @ 10V 3380pF @ 25V 4.5V, 10V ±20V
SQD40N10-25_GE3
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2,056
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Vishay Siliconix MOSFET N-CH 100V 40A TO252 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 136W (Tc) N-Channel - 100V 40A (Tc) 25 mOhm @ 40A, 10V 2.5V @ 250µA 70nC @ 10V 3380pF @ 25V 4.5V, 10V ±20V
FDP61N20
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1,897
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ON Semiconductor MOSFET N-CH 200V 61A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 417W (Tc) N-Channel - 200V 61A (Tc) 41 mOhm @ 30.5A, 10V 5V @ 250µA 75nC @ 10V 3380pF @ 25V 10V ±30V