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- Series :
- Part Status :
- Packaging :
- Mounting Type :
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- Power Dissipation (Max) :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,743
In-stock
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Infineon Technologies | MOSFET N-CH 650V 12A TO-247 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,764
In-stock
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Infineon Technologies | MOSFET N-CH 650V 12A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,305
In-stock
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Infineon Technologies | MOSFET N-CH 650V 12A TO263-3 | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,615
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | |||
|
VIEW |
2,444
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | |||
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|
VIEW |
1,552
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | |||
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|
VIEW |
1,650
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | |||
|
VIEW |
1,455
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 12A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | |||
