Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI7629DN-T1-GE3
RFQ
VIEW
RFQ
2,753
In-stock
Vishay Siliconix MOSFET P-CH 20V 35A 1212-8 PPAK TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) P-Channel - 20V 35A (Tc) 4.6 mOhm @ 20A, 10V 1.5V @ 250µA 177nC @ 10V 5790pF @ 10V 2.5V, 10V ±12V
SI7629DN-T1-GE3
RFQ
VIEW
RFQ
2,944
In-stock
Vishay Siliconix MOSFET P-CH 20V 35A 1212-8 PPAK TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) P-Channel - 20V 35A (Tc) 4.6 mOhm @ 20A, 10V 1.5V @ 250µA 177nC @ 10V 5790pF @ 10V 2.5V, 10V ±12V
SI7629DN-T1-GE3
RFQ
VIEW
RFQ
875
In-stock
Vishay Siliconix MOSFET P-CH 20V 35A 1212-8 PPAK TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) P-Channel - 20V 35A (Tc) 4.6 mOhm @ 20A, 10V 1.5V @ 250µA 177nC @ 10V 5790pF @ 10V 2.5V, 10V ±12V