Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK100A06N1,S4X
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 100A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 60V 100A (Tc) 2.7 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 10500pF @ 30V 10V ±20V
TK100E06N1,S1X
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1,498
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Toshiba Semiconductor and Storage MOSFET N CH 60V 100A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 255W (Tc) N-Channel - 60V 100A (Ta) 2.3 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 10500pF @ 30V 10V ±20V