Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL3713STRRPBF
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2,192
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Infineon Technologies MOSFET N-CH 30V 260A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 30V 260A (Tc) 3 mOhm @ 38A, 10V 2.5V @ 250µA 110nC @ 4.5V 5890pF @ 15V 4.5V, 10V ±20V
IRL3713SPBF
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3,841
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Infineon Technologies MOSFET N-CH 30V 260A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 30V 260A (Tc) 3 mOhm @ 38A, 10V 2.5V @ 250µA 110nC @ 4.5V 5890pF @ 15V 4.5V, 10V ±20V
IRL3713STRLPBF
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RFQ
1,263
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Infineon Technologies MOSFET N-CH 30V 260A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 30V 260A (Tc) 3 mOhm @ 38A, 10V 2.5V @ 250µA 110nC @ 4.5V 5890pF @ 15V 4.5V, 10V ±20V
IRL3713STRLPBF
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RFQ
3,512
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Infineon Technologies MOSFET N-CH 30V 260A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 30V 260A (Tc) 3 mOhm @ 38A, 10V 2.5V @ 250µA 110nC @ 4.5V 5890pF @ 15V 4.5V, 10V ±20V
IRL3713STRLPBF
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RFQ
3,651
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Infineon Technologies MOSFET N-CH 30V 260A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 30V 260A (Tc) 3 mOhm @ 38A, 10V 2.5V @ 250µA 110nC @ 4.5V 5890pF @ 15V 4.5V, 10V ±20V
IRL3713PBF
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2,822
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Infineon Technologies MOSFET N-CH 30V 260A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 30V 260A (Tc) 3 mOhm @ 38A, 10V 2.5V @ 250µA 110nC @ 4.5V 5890pF @ 15V 4.5V, 10V ±20V