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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXFH50N60X	RFQ VIEW	PDF RFQ	787 In-stock	IXYS	MOSFET N-CH 600V 50A TO247		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247	660W (Tc)	N-Channel	600V	50A (Tc)	73 mOhm @ 25A, 10V	4.5V @ 4mA	116nC @ 10V	4660pF @ 25V	10V	±30V
	IXFQ50N60X	RFQ VIEW	PDF RFQ	2,766 In-stock	IXYS	MOSFET N-CH 600V 50A TO3P		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	660W (Tc)	N-Channel	600V	50A (Tc)	73 mOhm @ 25A, 10V	4.5V @ 4mA	116nC @ 10V	4660pF @ 25V	10V	±30V
	IXFT50N60X	RFQ VIEW	PDF RFQ	1,802 In-stock	IXYS	MOSFET N-CH 600V 50A TO268		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268	660W (Tc)	N-Channel	600V	50A (Tc)	73 mOhm @ 25A, 10V	4.5V @ 4mA	116nC @ 10V	4660pF @ 25V	10V	±30V
	IRFP27N60K	RFQ VIEW	PDF RFQ	1,775 In-stock	Vishay Siliconix	MOSFET N-CH 600V 27A TO-247AC		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3	500W (Tc)	N-Channel	600V	27A (Tc)	220 mOhm @ 16A, 10V	5V @ 250µA	180nC @ 10V	4660pF @ 25V	10V	±30V
	IRFP27N60KPBF	RFQ VIEW	PDF RFQ	2,746 In-stock	Vishay Siliconix	MOSFET N-CH 600V 27A TO-247AC		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3	500W (Tc)	N-Channel	600V	27A (Tc)	220 mOhm @ 16A, 10V	5V @ 250µA	180nC @ 10V	4660pF @ 25V	10V	±30V

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