Transistors - FETs, MOSFETs - Single Products For Sale - PDF - Discrete Semiconductor Products -

Applied Filters :

4 results

Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
GLOBAL STOCKS
	AUIRFP4110	RFQ VIEW	PDF RFQ	1,483 In-stock	Infineon Technologies	MOSFET N-CH 100V 120A TO247		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	370W (Tc)	N-Channel	-	100V	120A (Tc)	4.5 mOhm @ 75A, 10V	4V @ 250µA	210nC @ 10V	9620pF @ 50V	10V	±20V
	IRFB4110PBF	RFQ VIEW	PDF RFQ	1,793 In-stock	Infineon Technologies	MOSFET N-CH 100V 120A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	370W (Tc)	N-Channel	-	100V	120A (Tc)	4.5 mOhm @ 75A, 10V	4V @ 250µA	210nC @ 10V	9620pF @ 50V	10V	±20V
	IRFB4110GPBF	RFQ VIEW	PDF RFQ	2,879 In-stock	Infineon Technologies	MOSFET N-CH 100V 120A TO220AB		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	370W (Tc)	N-Channel	-	100V	120A (Tc)	4.5 mOhm @ 75A, 10V	4V @ 250µA	210nC @ 10V	9620pF @ 50V	10V	±20V
	IRFP4110PBF	RFQ VIEW	PDF RFQ	2,449 In-stock	Infineon Technologies	MOSFET N-CH 100V 120A TO-247AC		HEXFET®	Active	Bulk	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	370W (Tc)	N-Channel	-	100V	120A (Tc)	4.5 mOhm @ 75A, 10V	4V @ 250µA	210nC @ 10V	9620pF @ 50V	10V	±20V

1 / 1

＜Prev Next＞