Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK100L60W,VQ
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655
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Toshiba Semiconductor and Storage MOSFET N CH 600V 100A TO3P(L) DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3PL TO-3P(L) 797W (Tc) N-Channel Super Junction 600V 100A (Ta) 18 mOhm @ 50A, 10V 3.7V @ 5mA 360nC @ 10V 15000pF @ 30V 10V ±30V
IPB010N06NATMA1
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RFQ
3,379
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Infineon Technologies MOSFET N-CH 60V 45A TO263-7 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 300W (Tc) N-Channel - 60V 45A (Ta), 180A (Tc) 1 mOhm @ 100A, 10V 4V @ 280µA 208nC @ 10V 15000pF @ 30V 6V, 10V ±20V
IPB010N06NATMA1
RFQ
VIEW
RFQ
2,910
In-stock
Infineon Technologies MOSFET N-CH 60V 45A TO263-7 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 300W (Tc) N-Channel - 60V 45A (Ta), 180A (Tc) 1 mOhm @ 100A, 10V 4V @ 280µA 208nC @ 10V 15000pF @ 30V 6V, 10V ±20V
IPB010N06NATMA1
RFQ
VIEW
RFQ
2,287
In-stock
Infineon Technologies MOSFET N-CH 60V 45A TO263-7 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 300W (Tc) N-Channel - 60V 45A (Ta), 180A (Tc) 1 mOhm @ 100A, 10V 4V @ 280µA 208nC @ 10V 15000pF @ 30V 6V, 10V ±20V