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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,102
In-stock
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Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 63W (Tc) | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,535
In-stock
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Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 63W (Tc) | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,234
In-stock
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Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 63W (Tc) | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,479
In-stock
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Infineon Technologies | MOSFET N-CH 20V 100A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 63W (Tc) | N-Channel | - | 20V | 100A (Tc) | 4 mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | 2.5V, 4.5V | ±12V | |||
