Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSB015N04NX3GXUMA1
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Infineon Technologies MOSFET N-CH 40V 180A 2WDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.8W (Ta), 89W (Tc) N-Channel - 40V 36A (Ta), 180A (Tc) 1.5 mOhm @ 30A, 10V 4V @ 250µA 142nC @ 10V 12000pF @ 20V 10V ±20V
BSB015N04NX3GXUMA1
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3,146
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Infineon Technologies MOSFET N-CH 40V 180A 2WDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.8W (Ta), 89W (Tc) N-Channel - 40V 36A (Ta), 180A (Tc) 1.5 mOhm @ 30A, 10V 4V @ 250µA 142nC @ 10V 12000pF @ 20V 10V ±20V
BSB015N04NX3GXUMA1
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1,846
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Infineon Technologies MOSFET N-CH 40V 180A 2WDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.8W (Ta), 89W (Tc) N-Channel - 40V 36A (Ta), 180A (Tc) 1.5 mOhm @ 30A, 10V 4V @ 250µA 142nC @ 10V 12000pF @ 20V 10V ±20V
BSC018N04LSGATMA1
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2,450
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 40V 30A (Ta), 100A (Tc) 1.8 mOhm @ 50A, 10V 2V @ 85µA 150nC @ 10V 12000pF @ 20V 4.5V, 10V ±20V
BSC018N04LSGATMA1
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1,778
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 40V 30A (Ta), 100A (Tc) 1.8 mOhm @ 50A, 10V 2V @ 85µA 150nC @ 10V 12000pF @ 20V 4.5V, 10V ±20V
BSC018N04LSGATMA1
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3,968
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 40V 30A (Ta), 100A (Tc) 1.8 mOhm @ 50A, 10V 2V @ 85µA 150nC @ 10V 12000pF @ 20V 4.5V, 10V ±20V
BSC016N04LSGATMA1
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3,892
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 40V 31A (Ta), 100A (Tc) 1.6 mOhm @ 50A, 10V 2V @ 85µA 150nC @ 10V 12000pF @ 20V 4.5V, 10V ±20V
BSC016N04LSGATMA1
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927
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 40V 31A (Ta), 100A (Tc) 1.6 mOhm @ 50A, 10V 2V @ 85µA 150nC @ 10V 12000pF @ 20V 4.5V, 10V ±20V
BSC016N04LSGATMA1
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RFQ
3,425
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 40V 31A (Ta), 100A (Tc) 1.6 mOhm @ 50A, 10V 2V @ 85µA 150nC @ 10V 12000pF @ 20V 4.5V, 10V ±20V