- Packaging :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,164
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 6.3A SOT-23 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 20V | 6.3A (Ta) | 21 mOhm @ 6.3A, 4.5V | 1.1V @ 10µA | 8.9nC @ 4.5V | 700pF @ 16V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
727
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 6.3A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 20V | 6.3A (Ta) | 21 mOhm @ 6.3A, 4.5V | 1.1V @ 10µA | 8.9nC @ 4.5V | 700pF @ 16V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
3,934
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 6.3A SOT-23 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | N-Channel | - | 20V | 6.3A (Ta) | 21 mOhm @ 6.3A, 4.5V | 1.1V @ 10µA | 8.9nC @ 4.5V | 700pF @ 16V | 2.5V, 4.5V | ±12V | |||
