Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FCPF7N60NT
RFQ
VIEW
RFQ
2,756
In-stock
ON Semiconductor MOSFET N-CH 600V 6.8A TO-220F SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 30.5W (Tc) N-Channel - 600V 6.8A (Tc) 520 mOhm @ 3.4A, 10V 4V @ 250µA 35.6nC @ 10V 960pF @ 100V 10V ±30V
FDMC2610
RFQ
VIEW
RFQ
1,113
In-stock
ON Semiconductor MOSFET N-CH 200V 2.2A POWER33-8 UniFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.1W (Ta), 42W (Tc) N-Channel - 200V 2.2A (Ta), 9.5A (Tc) 200 mOhm @ 2.2A, 10V 4V @ 250µA 18nC @ 10V 960pF @ 100V 6V, 10V ±20V
FDMC2610
RFQ
VIEW
RFQ
3,531
In-stock
ON Semiconductor MOSFET N-CH 200V 2.2A POWER33-8 UniFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.1W (Ta), 42W (Tc) N-Channel - 200V 2.2A (Ta), 9.5A (Tc) 200 mOhm @ 2.2A, 10V 4V @ 250µA 18nC @ 10V 960pF @ 100V 6V, 10V ±20V
FDMC2610
RFQ
VIEW
RFQ
3,852
In-stock
ON Semiconductor MOSFET N-CH 200V 2.2A POWER33-8 UniFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 2.1W (Ta), 42W (Tc) N-Channel - 200V 2.2A (Ta), 9.5A (Tc) 200 mOhm @ 2.2A, 10V 4V @ 250µA 18nC @ 10V 960pF @ 100V 6V, 10V ±20V