Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHD16N03LT,118
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1,807
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NXP USA Inc. MOSFET N-CH 30V 16A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 32.6W (Tc) N-Channel - 30V 16A (Tc) 67 mOhm @ 16A, 10V 2V @ 1mA 8.5nC @ 10V 210pF @ 30V 4.5V, 10V ±15V
SI2309CDS-T1-E3
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2,063
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Vishay Siliconix MOSFET P-CH 60V 1.6A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1W (Ta), 1.7W (Tc) P-Channel - 60V 1.6A (Tc) 345 mOhm @ 1.25A, 10V 3V @ 250µA 4.1nC @ 4.5V 210pF @ 30V 4.5V, 10V ±20V
SI2309CDS-T1-E3
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RFQ
1,140
In-stock
Vishay Siliconix MOSFET P-CH 60V 1.6A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1W (Ta), 1.7W (Tc) P-Channel - 60V 1.6A (Tc) 345 mOhm @ 1.25A, 10V 3V @ 250µA 4.1nC @ 4.5V 210pF @ 30V 4.5V, 10V ±20V
SI2309CDS-T1-E3
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RFQ
1,200
In-stock
Vishay Siliconix MOSFET P-CH 60V 1.6A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1W (Ta), 1.7W (Tc) P-Channel - 60V 1.6A (Tc) 345 mOhm @ 1.25A, 10V 3V @ 250µA 4.1nC @ 4.5V 210pF @ 30V 4.5V, 10V ±20V
SI2309CDS-T1-GE3
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RFQ
1,511
In-stock
Vishay Siliconix MOSFET P-CH 60V 1.6A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1W (Ta), 1.7W (Tc) P-Channel - 60V 1.6A (Tc) 345 mOhm @ 1.25A, 10V 3V @ 250µA 4.1nC @ 4.5V 210pF @ 30V 4.5V, 10V ±20V
SI2309CDS-T1-GE3
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RFQ
1,404
In-stock
Vishay Siliconix MOSFET P-CH 60V 1.6A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1W (Ta), 1.7W (Tc) P-Channel - 60V 1.6A (Tc) 345 mOhm @ 1.25A, 10V 3V @ 250µA 4.1nC @ 4.5V 210pF @ 30V 4.5V, 10V ±20V
SI2309CDS-T1-GE3
RFQ
VIEW
RFQ
3,072
In-stock
Vishay Siliconix MOSFET P-CH 60V 1.6A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1W (Ta), 1.7W (Tc) P-Channel - 60V 1.6A (Tc) 345 mOhm @ 1.25A, 10V 3V @ 250µA 4.1nC @ 4.5V 210pF @ 30V 4.5V, 10V ±20V