Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET N-CH 1200V 18A SP1 - Obsolete Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP1 SP1 390W (Tc) N-Channel - 1200V 18A (Tc) 672 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V 7736pF @ 25V 10V ±30V
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Microsemi Corporation MOSFET N-CH 1200V 18A SP1 - Obsolete Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP1 SP1 390W (Tc) N-Channel - 1200V 18A (Tc) 672 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V 7736pF @ 25V 10V ±30V
APT20M120JCU3
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1,677
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Microsemi Corporation MOSFET N-CH 1200V 20A SOT227 POWER MOS 8™ Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 543W (Tc) N-Channel - 1200V 20A (Tc) 672 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V 7736pF @ 25V 10V ±30V
APT20M120JCU2
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1,025
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Microsemi Corporation MOSFET N-CH 1200V 20A SOT227 POWER MOS 8™ Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 543W (Tc) N-Channel - 1200V 20A (Tc) 672 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V 7736pF @ 25V 10V ±30V