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- Rds On (Max) @ Id, Vgs :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,319
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 6A 1206-8 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 2.5W (Ta), 6.3W (Tc) | P-Channel | 12V | 6A (Ta) | 28 mOhm @ 5.6A, 4.5V | 1V @ 250µA | 40nC @ 8V | 1400pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,308
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 6A 1206-8 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 2.5W (Ta), 6.3W (Tc) | P-Channel | 12V | 6A (Ta) | 28 mOhm @ 5.6A, 4.5V | 1V @ 250µA | 40nC @ 8V | 1400pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,387
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 10A UDFN6B | U-MOSVII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 10A (Ta) | 16.2 mOhm @ 4A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | 1400pF @ 6V | 1.8V, 8V | ±10V | |||
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VIEW |
1,746
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 10A UDFN6B | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 10A (Ta) | 16.2 mOhm @ 4A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | 1400pF @ 6V | 1.8V, 8V | ±10V | |||
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VIEW |
2,177
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 10A UDFN6B | U-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 10A (Ta) | 16.2 mOhm @ 4A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | 1400pF @ 6V | 1.8V, 8V | ±10V | |||
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VIEW |
865
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A SOT23F | U-MOSVII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | 12V | 6A (Ta) | 17.6 mOhm @ 6A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | 1400pF @ 6V | 1.8V, 8V | ±10V | |||
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VIEW |
2,490
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A SOT23F | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | 12V | 6A (Ta) | 17.6 mOhm @ 6A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | 1400pF @ 6V | 1.8V, 8V | ±10V | |||
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VIEW |
2,682
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A SOT23F | U-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | 12V | 6A (Ta) | 17.6 mOhm @ 6A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | 1400pF @ 6V | 1.8V, 8V | ±10V | |||
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VIEW |
3,611
In-stock
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Nexperia USA Inc. | MOSFET P-CH 12V 6WLCSP | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | 6-WLCSP (1.48x.98) | 556mW (Ta), 12.5W (Tc) | P-Channel | 12V | 6.2A (Ta) | 25 mOhm @ 3A, 4.5V | 900mV @ 250µA | 29.4nC @ 4.5V | 1400pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,402
In-stock
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Nexperia USA Inc. | MOSFET P-CH 12V 6WLCSP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | 6-WLCSP (1.48x.98) | 556mW (Ta), 12.5W (Tc) | P-Channel | 12V | 6.2A (Ta) | 25 mOhm @ 3A, 4.5V | 900mV @ 250µA | 29.4nC @ 4.5V | 1400pF @ 6V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
3,482
In-stock
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Nexperia USA Inc. | MOSFET P-CH 12V 6WLCSP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | 6-WLCSP (1.48x.98) | 556mW (Ta), 12.5W (Tc) | P-Channel | 12V | 6.2A (Ta) | 25 mOhm @ 3A, 4.5V | 900mV @ 250µA | 29.4nC @ 4.5V | 1400pF @ 6V | 1.8V, 4.5V | ±8V | |||
