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- Operating Temperature :
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- Power Dissipation (Max) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,065
In-stock
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Infineon Technologies | MOSFET N-CH 650V 53.5A TO247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 391W (Tc) | N-Channel | - | 650V | 53.5A (Tc) | 70 mOhm @ 17.6A, 10V | 3.5V @ 1.76mA | 170nC @ 10V | 3900pF @ 100V | 10V | ±20V | |||
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VIEW |
1,152
In-stock
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STMicroelectronics | MOSFET N-CH 650V 49A TO247 | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 358W (Tc) | N-Channel | - | 650V | 49A (Tc) | 62 mOhm @ 24.5A, 10V | 4V @ 250µA | 93nC @ 10V | 3900pF @ 100V | 10V | ±25V | |||
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VIEW |
1,951
In-stock
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STMicroelectronics | MOSFET N-CH 650V I2PAKFP | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 358W (Tc) | N-Channel | - | 650V | 49A (Tc) | 62 mOhm @ 24.5A, 10V | 4V @ 250µA | 93nC @ 10V | 3900pF @ 100V | 10V | ±25V | |||
