Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCMT199N60
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VIEW
RFQ
1,443
In-stock
ON Semiconductor MOSFET N-CH 600V 20.2A POWER88 SuperFET® II Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN Power88 208W (Tc) N-Channel - 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 100V 10V ±20V
FCMT199N60
RFQ
VIEW
RFQ
3,977
In-stock
ON Semiconductor MOSFET N-CH 600V 20.2A POWER88 SuperFET® II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN Power88 208W (Tc) N-Channel - 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 100V 10V ±20V
FCMT199N60
RFQ
VIEW
RFQ
3,633
In-stock
ON Semiconductor MOSFET N-CH 600V 20.2A POWER88 SuperFET® II Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN Power88 208W (Tc) N-Channel - 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 100V 10V ±20V
STW36N55M5
RFQ
VIEW
RFQ
3,148
In-stock
STMicroelectronics MOSFET N CH 550V 33A TO-247 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 190W (Tc) N-Channel - 550V 33A (Tc) 80 mOhm @ 16.5A, 10V 5V @ 250µA 62nC @ 10V 2950pF @ 100V 10V ±25V