Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHW23N60E-GE3
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3,915
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Vishay Siliconix MOSFET N-CH 600V 23A TO-247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 227W (Tc) N-Channel - 600V 23A (Tc) 158 mOhm @ 12A, 10V 4V @ 250µA 95nC @ 10V 2418pF @ 100V 10V ±20V
SIHF23N60E-GE3
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2,329
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Vishay Siliconix MOSFET N-CH 600V 23A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 35W (Tc) N-Channel - 600V 23A (Tc) 158 mOhm @ 12A, 10V 4V @ 250µA 95nC @ 10V 2418pF @ 100V 10V ±30V
SIHP23N60E-GE3
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1,109
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Vishay Siliconix MOSFET N-CH 600V 23A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 227W (Tc) N-Channel - 600V 23A (Tc) 158 mOhm @ 12A, 10V 4V @ 250µA 95nC @ 10V 2418pF @ 100V 10V ±30V
SIHB23N60E-GE3
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RFQ
1,503
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Vishay Siliconix MOSFET N-CH 600V 23A D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 227W (Tc) N-Channel - 600V 23A (Tc) 158 mOhm @ 12A, 10V 4V @ 250µA 95nC @ 10V 2418pF @ 100V 10V ±30V
SIHG23N60E-GE3
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RFQ
1,617
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Vishay Siliconix MOSFET N-CH 600V 23A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TA) Through Hole TO-247-3 TO-247AC 227W (Tc) N-Channel - 600V 23A (Tc) 158 mOhm @ 12A, 10V 4V @ 250µA 95nC @ 10V 2418pF @ 100V 10V ±30V