Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM60NB099PW C1G
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 38A TO247 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 329W (Tc) N-Channel 600V 38A (Tc) 99 mOhm @ 11.7A, 10V 4V @ 250µA 62nC @ 10V 2587pF @ 100V 10V ±30V
TSM60NB099CZ C0G
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3,913
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 38A TO220 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 298W (Tc) N-Channel 600V 38A (Tc) 99 mOhm @ 11.3A, 10V 4V @ 250µA 62nC @ 10V 2587pF @ 100V 10V ±30V
TSM60NB099CF C0G
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974
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 38A ITO220S Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack ITO-220S 69W (Tc) N-Channel 600V 38A (Tc) 99 mOhm @ 5.3A, 10V 4V @ 250µA 62nC @ 10V 2587pF @ 100V 10V ±30V