Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK17E80W,S1X
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Toshiba Semiconductor and Storage MOSFET N-CHANNEL 800V 17A TO220 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 TO-220 180W (Tc) N-Channel - 800V 17A (Ta) 290 mOhm @ 8.5A, 10V 4V @ 850µA 32nC @ 10V 2050pF @ 300V 10V ±20V
TK17A80W,S4X
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RFQ
2,168
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 800V 17A TO220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 800V 17A (Ta) 290 mOhm @ 8.5A, 10V 4V @ 850µA 32nC @ 10V 2050pF @ 300V 10V ±20V