Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHB22N60AE-GE3
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1,338
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Vishay Siliconix MOSFET N-CH 600V 20A D2PAK E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 179W (Tc) N-Channel - 600V 20A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 96nC @ 10V 1451pF @ 100V 10V ±30V
SIHG22N60AE-GE3
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2,608
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Vishay Siliconix MOSFET N-CH 600V 20A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 179W (Tc) N-Channel - 600V 20A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 96nC @ 10V 1451pF @ 100V 10V ±30V
SIHP22N60AE-GE3
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2,478
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Vishay Siliconix MOSFET N-CH 600V 20A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 179W (Tc) N-Channel - 600V 20A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 96nC @ 10V 1451pF @ 100V 10V ±30V
SIHA22N60AE-E3
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606
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Vishay Siliconix MOSFET N-CHANNEL 600V 20A TO220 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 33W (Tc) N-Channel - 600V 20A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 96nC @ 10V 1451pF @ 100V 10V ±30V