Package / Case :
Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHP14N50D-GE3
RFQ
VIEW
RFQ
805
In-stock
Vishay Siliconix MOSFET N-CH 500V 14A TO-200AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 208W (Tc) N-Channel 500V 14A (Tc) 400 mOhm @ 7A, 10V 5V @ 250µA 58nC @ 10V 1144pF @ 100V 10V ±30V
SIHP14N50D-E3
RFQ
VIEW
RFQ
974
In-stock
Vishay Siliconix MOSFET N-CH 500V 14A TO-200AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 208W (Tc) N-Channel 500V 14A (Tc) 400 mOhm @ 7A, 10V 5V @ 250µA 58nC @ 10V 1144pF @ 100V 10V ±30V
SIHG14N50D-E3
RFQ
VIEW
RFQ
2,297
In-stock
Vishay Siliconix MOSFET N-CH 500V 14A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 208W (Tc) N-Channel 500V 14A (Tc) 400 mOhm @ 7A, 10V 5V @ 250µA 58nC @ 10V 1144pF @ 100V 10V ±30V
SIHG14N50D-GE3
RFQ
VIEW
RFQ
2,607
In-stock
Vishay Siliconix MOSFET N-CH 500V 14A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 208W (Tc) N-Channel 500V 14A (Tc) 400 mOhm @ 7A, 10V 5V @ 250µA 58nC @ 10V 1144pF @ 100V 10V ±30V