Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCP13N60N
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1,678
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ON Semiconductor MOSFET N-CH 600V 13A TO220 SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 116W (Tc) N-Channel 600V 13A (Tc) 258 mOhm @ 6.5A, 10V 4V @ 250µA 39.5nC @ 10V 1765pF @ 100V 10V ±30V
FCPF13N60NT
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3,558
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ON Semiconductor MOSFET N-CH 600V 13A TO220F SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 (Y-Forming) 33.8W (Tc) N-Channel 600V 13A (Tc) 258 mOhm @ 6.5A, 10V 4V @ 250µA 39.5nC @ 10V 1765pF @ 100V 10V ±30V
TSM60NB150CF C0G
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3,297
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 24A ITO220S - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack ITO-220S 62.5W (Tc) N-Channel 600V 24A (Tc) 150 mOhm @ 4.3A, 10V 4V @ 250µA 43nC @ 10V 1765pF @ 100V 10V ±30V