Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTF03N400
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1,897
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IXYS MOSFET N-CH 4000V 300MA I4PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) ISOPLUS i4-PAC™ 70W (Tc) N-Channel 4000V 300mA (Tc) 300 Ohm @ 150mA, 10V 4V @ 250µA 16.3nC @ 10V 435pF @ 25V 10V ±20V
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2,838
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IXYS MOSFET N-CH 4000V .3A PLUS 220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PLUS-220SMD PLUS-220SMD 130W (Tc) N-Channel 4000V 300mA (Tc) 290 Ohm @ 500mA, 10V 4V @ 250µA 16.3nC @ 10V 435pF @ 25V 10V ±20V
TSM2N60SCW RPG
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968
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 600MA SOT223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel 600V 600mA (Tc) 5 Ohm @ 600mA, 10V 4V @ 250µA 13nC @ 10V 435pF @ 25V 10V ±30V
TSM2N60SCW RPG
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RFQ
1,709
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 600MA SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel 600V 600mA (Tc) 5 Ohm @ 600mA, 10V 4V @ 250µA 13nC @ 10V 435pF @ 25V 10V ±30V
TSM2N60SCW RPG
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RFQ
1,504
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 600MA SOT223 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel 600V 600mA (Tc) 5 Ohm @ 600mA, 10V 4V @ 250µA 13nC @ 10V 435pF @ 25V 10V ±30V