Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM100N06CZ C0G
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3,279
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 100A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 167W (Tc) N-Channel 60V 100A (Tc) 6.7 mOhm @ 30A, 10V 4V @ 250µA 92nC @ 10V 4382pF @ 30V 10V ±20V
TSM60N06CP ROG
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3,310
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 66A TO252 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 44.6W (Tc) N-Channel 60V 66A (Tc) 7.3 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 4382pF @ 30V 10V ±20V
TSM60N06CP ROG
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1,792
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 66A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 44.6W (Tc) N-Channel 60V 66A (Tc) 7.3 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 4382pF @ 30V 10V ±20V
TSM60N06CP ROG
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RFQ
3,186
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 66A TO252 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 44.6W (Tc) N-Channel 60V 66A (Tc) 7.3 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 4382pF @ 30V 10V ±20V