Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFA38N30X3
RFQ
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RFQ
2,841
In-stock
IXYS FET N-CHANNEL HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 240W (Tc) N-Channel - 300V 38A (Tc) 50 mOhm @ 19A, 10V 4.5V @ 1mA 35nC @ 10V 2240pF @ 25V 10V ±20V
IXFP38N30X3
RFQ
VIEW
RFQ
2,516
In-stock
IXYS FET N-CHANNEL HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 240W (Tc) N-Channel - 300V 38A (Tc) 50 mOhm @ 19A, 10V 4.5V @ 1mA 35nC @ 10V 2240pF @ 25V 10V ±20V
PMK30EP,518
RFQ
VIEW
RFQ
1,813
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 14.9A 8-SOIC TrenchMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6.9W (Tc) P-Channel - 30V 14.9A (Tc) 19 mOhm @ 9.2A, 10V 3V @ 250µA 50nC @ 10V 2240pF @ 25V 10V ±20V
PMK30EP,518
RFQ
VIEW
RFQ
990
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 14.9A 8-SOIC TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6.9W (Tc) P-Channel - 30V 14.9A (Tc) 19 mOhm @ 9.2A, 10V 3V @ 250µA 50nC @ 10V 2240pF @ 25V 10V ±20V
PMK30EP,518
RFQ
VIEW
RFQ
1,862
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 14.9A 8-SOIC TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6.9W (Tc) P-Channel - 30V 14.9A (Tc) 19 mOhm @ 9.2A, 10V 3V @ 250µA 50nC @ 10V 2240pF @ 25V 10V ±20V