Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIRC10DP-T1-GE3
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987
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Vishay Siliconix MOSFET N-CH 30V 60A POWERPAKSO-8 TrenchFET® Gen IV Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 43W (Tc) N-Channel Schottky Diode (Isolated) 30V 60A (Tc) 3.5 mOhm @ 10A, 10V 2.4V @ 250µA 36nC @ 10V 1873pF @ 15V 4.5V, 10V +20V, -16V
SIRC10DP-T1-GE3
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RFQ
2,422
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Vishay Siliconix MOSFET N-CH 30V 60A POWERPAKSO-8 TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 43W (Tc) N-Channel Schottky Diode (Isolated) 30V 60A (Tc) 3.5 mOhm @ 10A, 10V 2.4V @ 250µA 36nC @ 10V 1873pF @ 15V 4.5V, 10V +20V, -16V
SIRC10DP-T1-GE3
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VIEW
RFQ
626
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Vishay Siliconix MOSFET N-CH 30V 60A POWERPAKSO-8 TrenchFET® Gen IV Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 43W (Tc) N-Channel Schottky Diode (Isolated) 30V 60A (Tc) 3.5 mOhm @ 10A, 10V 2.4V @ 250µA 36nC @ 10V 1873pF @ 15V 4.5V, 10V +20V, -16V