Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFX170N20T
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3,073
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IXYS MOSFET N-CH 200V 170A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1150W (Tc) N-Channel - 200V 170A (Tc) 11 mOhm @ 60A, 10V 5V @ 4mA 265nC @ 10V 19600pF @ 25V 10V ±20V
IXFK170N20T
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RFQ
3,558
In-stock
IXYS MOSFET N-CH 200V 170A TO-264 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1150W (Tc) N-Channel - 200V 170A (Tc) 11 mOhm @ 60A, 10V 5V @ 4mA 265nC @ 10V 19600pF @ 25V 10V ±20V