- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,044
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,698
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,626
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
.jpg)
|
VIEW |
2,688
In-stock
|
IXYS | MOSFET N-CH 600V 30A TO247AD | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-247AD (IXKH) | - | N-Channel | Super Junction | 600V | 30A (Tc) | 125 mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 10V | 10V | ±20V | |||
|
|
VIEW |
2,101
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,607
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,507
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
980
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,628
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,047
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,242
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V 9.7A 4-MICROFOOT | TrenchFET® Gen III | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA | 4-MICRO FOOT® (1.6x1.6) | 2.8W (Tc) | P-Channel | - | 20V | 9.7A (Tc) | 21 mOhm @ 3A, 4.5V | 900mV @ 250µA | 47nC @ 4.5V | 2500pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
2,447
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V 9.7A 4-MICROFOOT | TrenchFET® Gen III | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA | 4-MICRO FOOT® (1.6x1.6) | 2.8W (Tc) | P-Channel | - | 20V | 9.7A (Tc) | 21 mOhm @ 3A, 4.5V | 900mV @ 250µA | 47nC @ 4.5V | 2500pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
1,610
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V 9.7A 4-MICROFOOT | TrenchFET® Gen III | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA | 4-MICRO FOOT® (1.6x1.6) | 2.8W (Tc) | P-Channel | - | 20V | 9.7A (Tc) | 21 mOhm @ 3A, 4.5V | 900mV @ 250µA | 47nC @ 4.5V | 2500pF @ 10V | 1.8V, 4.5V | ±8V | |||
