Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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GP1M007A090H
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RFQ
3,412
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Global Power Technologies Group MOSFET N-CH 900V 7A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 250W (Tc) N-Channel 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V
GP1M007A090FH
RFQ
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RFQ
2,006
In-stock
Global Power Technologies Group MOSFET N-CH 900V 7A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40.3W (Tc) N-Channel 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V
APT10090BLLG
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RFQ
2,349
In-stock
Microsemi Corporation MOSFET N-CH 1000V 12A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 298W (Tc) N-Channel 1000V 12A (Tc) 950 mOhm @ 6A, 10V 5V @ 1mA 71nC @ 10V 1969pF @ 25V 10V ±30V
TSM7N90CZ C0G
RFQ
VIEW
RFQ
3,425
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 7A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 40.3W (Tc) N-Channel 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V
TSM7N90CI C0G
RFQ
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RFQ
3,409
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 7A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 40.3W (Tc) N-Channel 900V 7A (Tc) 1.9 Ohm @ 3.5A, 10V 4V @ 250µA 49nC @ 10V 1969pF @ 25V 10V ±30V