Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK380A60Y,S4X
RFQ
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2,227
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 9.7A TO220SIS DTMOSV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W N-Channel - 600V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V
TK380P65Y,RQ
RFQ
VIEW
RFQ
2,264
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Toshiba Semiconductor and Storage MOSFET N-CHANNEL 650V 9.7A DPAK DTMOSV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 650V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V
TK380P65Y,RQ
RFQ
VIEW
RFQ
904
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 650V 9.7A DPAK DTMOSV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 650V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V
TK380P65Y,RQ
RFQ
VIEW
RFQ
2,424
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 650V 9.7A DPAK DTMOSV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 650V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V
TK380P60Y,RQ
RFQ
VIEW
RFQ
1,776
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 600V 9.7A DPAK DTMOSV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 30W (Tc) N-Channel - 600V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V
TK380P60Y,RQ
RFQ
VIEW
RFQ
1,951
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 600V 9.7A DPAK DTMOSV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 30W (Tc) N-Channel - 600V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V
TK380P60Y,RQ
RFQ
VIEW
RFQ
677
In-stock
Toshiba Semiconductor and Storage MOSFET N-CHANNEL 600V 9.7A DPAK DTMOSV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 30W (Tc) N-Channel - 600V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V
TK8A60W5,S5VX
RFQ
VIEW
RFQ
3,842
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 8A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 600V 8A (Ta) 540 mOhm @ 4A, 10V 4.5V @ 400µA 22nC @ 10V 590pF @ 300V 10V ±30V
TK8P60W5,RVQ
RFQ
VIEW
RFQ
3,430
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 8A DPAK DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 600V 8A (Ta) 560 mOhm @ 4A, 10V 4.5V @ 400µA 22nC @ 10V 590pF @ 300V 10V ±30V
TK8P60W5,RVQ
RFQ
VIEW
RFQ
3,254
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 8A DPAK DTMOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 600V 8A (Ta) 560 mOhm @ 4A, 10V 4.5V @ 400µA 22nC @ 10V 590pF @ 300V 10V ±30V
TK8P60W5,RVQ
RFQ
VIEW
RFQ
3,299
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 8A DPAK DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 600V 8A (Ta) 560 mOhm @ 4A, 10V 4.5V @ 400µA 22nC @ 10V 590pF @ 300V 10V ±30V